Specification	ECH8667-TL-H

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs [Max]	39 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

ECH8667 Series

Dual P-Channel Power MOSFET, -30V, -5.5A, 39mΩ

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Configuration	FET Feature	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type
ON Semiconductor ECH8667-TL-H	39 mOhm	30 V	13 nC	150 °C	2 P-Channel	Logic Level Gate	1.5 W	5.5 A	8-ECH	600 pF	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ECH8667 is a P-Channel Power MOSFET, -30V, -5.5A, 39mΩ, Dual ECH8 for General-Purpose Switching Device Application.

Technical documentation and resources