Specification	FDP8030L

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	170 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power Dissipation (Max)	187 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FDP8030L Series

N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 35mΩ

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package
ON Semiconductor FDP8030L	TO-220-3	4.5 V 10 V	N-Channel	MOSFET (Metal Oxide)	2 V	30 V	Through Hole	170 nC	175 ░C	-65 °C	20 V	80 A	3.5 mOhm	187 W	TO-220-3
ON Semiconductor FDP8030L	TO-220-3	4.5 V 10 V	N-Channel	MOSFET (Metal Oxide)	2 V	30 V	Through Hole	170 nC	175 ░C	-65 °C	20 V	80 A	3.5 mOhm	187 W	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	59	$ 5.11
		59	$ 5.11

Description

General part information

FDP8030L Series

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.