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TMS320F28376SZWTS
Integrated Circuits (ICs)

TMS5702134CZWTQQ1

Obsolete
Texas Instruments

IC MCU 16/32B 2MB FLASH 337NFBGA

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TMS320F28376SZWTS
Integrated Circuits (ICs)

TMS5702134CZWTQQ1

Obsolete
Texas Instruments

IC MCU 16/32B 2MB FLASH 337NFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTMS5702134CZWTQQ1
ConnectivitySCI, UART/USART, LINbus, I2C, MibSPI, EBI/EMI, CANbus, SPI
Core ProcessorARM® Cortex®-R4F
Core Size [Max]32 Bit
Core Size [Min]16 Bit
Data Converters [custom]12
Data Converters [custom]24
EEPROM Size64 K
GradeAutomotive
Mounting TypeSurface Mount
Number of I/O120
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Oscillator TypeExternal
Package / Case337-LFBGA
PeripheralsWDT, DMA, PWM, POR
Program Memory Size2 MB
Program Memory TypeFLASH
QualificationAEC-Q100
RAM Size256 K
Speed180 MHz
Supplier Device Package337-NFBGA (16x16)
Voltage - Supply (Vcc/Vdd) [Max]3.6 V
Voltage - Supply (Vcc/Vdd) [Min]1.14 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

TMS570LS2124 Series

The TMS570LS31x5/21x5 device is a high-performance automotive-grade microcontroller family for safety systems. The safety architecture includes dual CPUs in lockstep, CPU and memory BIST logic, ECC on both the flash and the data SRAM, parity on peripheral memories, and loopback capability on peripheral I/Os.

The TMS570LS31x5/21x5 device integrates the ARM Cortex-R4F Floating-Point CPU. The CPU offers an efficient 1.66 DMIPS/MHz, and has configurations that can run up to 180 MHz, providing up to 298 DMIPS. The device supports the word-invariant big-endian [BE32] format.

The TMS570LS3135 device has 3MB of integrated flash and 256KB of data RAM. The TMS570LS2135 device has 2MB of integrated flash and 256KB of data RAM. The TMS570LS2125 device has 2MB of integrated flash and 192KB of data RAM. Both the flash and RAM have single-bit error correction and double-bit error detection. The flash memory on this device is a nonvolatile, electrically erasable, and programmable memory implemented with a 64-bit-wide data bus interface. The flash operates on a 3.3-V supply input (same level as I/O supply) for all read, program, and erase operations. When in pipeline mode, the flash operates with a system clock frequency of up to 180 MHz. The SRAM supports single-cycle read and write accesses in byte, halfword, word, and double-word modes.

Documents

Technical documentation and resources

No documents available