Discrete Semiconductor Products
R6507KND3TL1
ActiveRohm Semiconductor
HIGH-SPEED SWITCHING, NCH 650V 7A, TO-252 (DPAK), POWER MOSFET
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Discrete Semiconductor Products
R6507KND3TL1
ActiveRohm Semiconductor
HIGH-SPEED SWITCHING, NCH 650V 7A, TO-252 (DPAK), POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | R6507KND3TL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 78 W |
| Rds On (Max) @ Id, Vgs | 665 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6507END3 Series
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Documents
Technical documentation and resources
