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SOT 23-3
Discrete Semiconductor Products

NSVMMUN2230LT1G

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ON Semiconductor

TRANS DIGITAL BJT NPN 50V 0.1A 3-PIN SOT-23 T/R

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SOT 23-3
Discrete Semiconductor Products

NSVMMUN2230LT1G

Active
ON Semiconductor

TRANS DIGITAL BJT NPN 50V 0.1A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVMMUN2230LT1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]3 hFE
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]246 mW
QualificationAEC-Q101
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhm
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.17
10$ 0.10
100$ 0.06
500$ 0.05
1000$ 0.04
Digi-Reel® 1$ 0.17
10$ 0.10
100$ 0.06
500$ 0.05
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.02
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
NewarkEach (Supplied on Full Reel) 6000$ 0.03
18000$ 0.03
30000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MMUN2230L Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.