Discrete Semiconductor Products

SISH101DN-T1-GE3

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MOSFET P-CH 30V 16.9A/35A PPAK

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Discrete Semiconductor Products

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MOSFET P-CH 30V 16.9A/35A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISH101DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A, 16.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	3595 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Mounting Type	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay General Semiconductor - Diodes Division SISH101DN-T1-GE3	102 nC	25 V	P-Channel	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® 1212-8SH	2.5 V	3595 pF	30 V	4.5 V 10 V	-55 °C	150 °C	7.2 mOhm	3.7 W 52 W	16.9 A 35 A	PowerPAK® 1212-8SH

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General part information

P-Channel 30 V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources