Discrete Semiconductor Products

PMV19XNEAR

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MOSFET N-CH 30V 6A TO236AB

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 6A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV19XNEAR

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	610 mW, 8.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	24 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Current - Continuous Drain (Id) @ 25°C	Grade	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Qualification	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Freescale Semiconductor - NXP PMV19XNEAR	6 A	Automotive	1.8 V 4.5 V	-55 °C	175 ░C	24 mOhm	8.3 W 610 mW	30 V	AEC-Q101	N-Channel	900 mV	18.6 nC	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	8 V	TO-236AB	1150 pF	Surface Mount

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General part information

N-Channel 30 V 6A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

Technical documentation and resources