Discrete Semiconductor Products

BD435S

Obsolete

MEDIUM POWER NPN BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

Obsolete

MEDIUM POWER NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BD435S

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	36 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Medium Power NPN Bipolar Power Transistor

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Mounting Type	Operating Temperature	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Supplier Device Package	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor BD435STU	4 A	100 µA	TO-126-3 TO-225AA	Through Hole	150 °C	36 W	40 hFE	500 mV	32 V	NPN	TO-126-3	3 MHz
ON Semiconductor BD435S	4 A	100 µA	TO-126-3 TO-225AA	Through Hole	150 °C	36 W	40 hFE	500 mV	32 V	NPN	TO-126-3	3 MHz
ON Semiconductor BD435	4 A	100 µA	TO-126-3 TO-225AA	Through Hole		36 W		500 mV	32 V	NPN	TO-126	3 MHz	-55 °C	150 °C	85
ON Semiconductor BD435G	4 A	100 µA	TO-126-3 TO-225AA	Through Hole		36 W		500 mV	32 V	NPN	TO-126	3 MHz	-55 °C	150 °C	85

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This series of plastic, medium-power NPN transistors can be used for amplifier and switching applications.Replacement Active Part Number:BD435