Discrete Semiconductor Products
FDP025N06
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 265A, 2.5MΩ
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Discrete Semiconductor Products
FDP025N06
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 265A, 2.5MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDP025N06 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 226 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 14885 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 395 W |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.70 | |
| 50 | $ 3.72 | |||
| 100 | $ 3.19 | |||
| 500 | $ 2.84 | |||
| 1000 | $ 2.43 | |||
| 2000 | $ 2.29 | |||
| Newark | Each | 1000 | $ 2.46 | |
| 2500 | $ 2.34 | |||
| 10000 | $ 2.20 | |||
| ON Semiconductor | N/A | 1 | $ 2.02 | |
Description
General part information
FDP025N06 Series
This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Documents
Technical documentation and resources