Specification	MJD128T4G

Current - Collector (Ic) (Max) [Max]	8 A
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 hFE
Frequency - Transition	4 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

MJD128 Series

8.0 A, 120 V PNP Darlington Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Mounting Type	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor MJD128T4G	4 V	DPAK	8 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	1000 hFE	4 MHz	Surface Mount	1.75 W	150 °C	-65 °C	PNP - Darlington	120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The PNP Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

Technical documentation and resources