Discrete Semiconductor Products

BUK9Y30-75B,115

Active

BUK9Y30-75B - N-CHANNEL TRENCHMOS LOGIC LEVEL FET@EN-US SOIC 4-PIN

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BUK9Y30-75B - N-CHANNEL TRENCHMOS LOGIC LEVEL FET@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y30-75B,115

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2070 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	85 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Technology	Grade	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Freescale Semiconductor - NXP BUK9Y30-75B,115	15 V	MOSFET (Metal Oxide)	Automotive	85 W	Surface Mount	75 V	2 V	28 mOhm	34 A	2070 pF	AEC-Q101	SC-100 SOT-669	LFPAK56 Power-SO8	-55 °C	175 ░C	5 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 34A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources