Specification	CPH6350-TL-W

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	6-CPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

CPH6350 Series

P-Channel Power MOSFET, -30V, -6A, 43mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor CPH6350-TL-W	13 nC	P-Channel	150 °C	MOSFET (Metal Oxide)	SOT-23-6	6 A	Surface Mount	43 mOhm	4 V	10 V	20 V	600 pF	6-CPH	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

CPH6350 is P-Channel Power MOSFET, -30V, -6A, 43mΩ, Single CPH6 for General-Purpose Switching Device Applications.

Technical documentation and resources