Discrete Semiconductor Products

KSD1406GTU

Obsolete

TRANS NPN 60V 3A TO220F-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 60V 3A TO220F-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSD1406GTU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	25 W
Supplier Device Package	TO-220F-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSD1406GTU	25 W	NPN	100 µA	TO-220-3 Full Pack	150 °C	150 hFE	Through Hole	3 MHz	60 V	TO-220F-3	3 A	1 V
ON Semiconductor KSD1406YTU	25 W	NPN	100 µA	TO-220-3 Full Pack	150 °C	100	Through Hole	3 MHz	60 V	TO-220F-3	3 A	1 V
ON Semiconductor KSD1406OTU	25 W	NPN	100 µA	TO-220-3 Full Pack	150 °C	60	Through Hole	3 MHz	60 V	TO-220F-3	3 A	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3

Technical documentation and resources