
Discrete Semiconductor Products
SE30PAD-M3/I
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO221BC
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Discrete Semiconductor Products
SE30PAD-M3/I
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO221BC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SE30PAD-M3/I |
|---|---|
| Capacitance @ Vr, F | 13 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | DO-221BC, SMA Flat Leads Exposed Pad |
| Reverse Recovery Time (trr) | 1.3 µs |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-221BC (SMPA) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.16 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SE30 Series
Diode 200 V 3A Surface Mount DO-221BC (SMPA)
Documents
Technical documentation and resources