Discrete Semiconductor Products

FDS6982S

Obsolete

ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

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Discrete Semiconductor Products

FDS6982S

Obsolete

ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6982S

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8.6 A, 6.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12 nC, 5 V
Input Capacitance (Ciss) (Max) @ Vds	2040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDS6984AS Series

Dual N-Channel Logic Level PWM Optimized PowerTrench<sup>®</sup> MOSFET 30V, 6A, 28mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power - Max [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDS6900S	771 pF 1238 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	22 mOhm 30 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	11 nC	17 nC	3 V 3 V	900 mW	Surface Mount	8.2 A	6.9 A	Logic Level Gate	30 V
ON Semiconductor FDS6984S	1233 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	19 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	5 V 12 nC		3 V	900 mW	Surface Mount	8.5 A	5.5 A	Logic Level Gate	30 V
ON Semiconductor FDS6986AS	720 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	29 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	17 nC		3 V	900 mW	Surface Mount			Logic Level Gate	30 V	6.5 A 7.9 A
ON Semiconductor FDS6912	740 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	28 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)			3 V	2 W	Surface Mount			Logic Level Gate	30 V	6 A	10 nC
ON Semiconductor FDS6986AS	720 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	29 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	17 nC		3 V	900 mW	Surface Mount			Logic Level Gate	30 V	6.5 A 7.9 A
ON Semiconductor FDS6984S	1233 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	19 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	5 V 12 nC		3 V	900 mW	Surface Mount	8.5 A	5.5 A	Logic Level Gate	30 V
ON Semiconductor FDS6961A	220 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	90 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	4 nC		3 V	900 mW	Surface Mount			Logic Level Gate	30 V	3.5 A
ON Semiconductor FDS6912	740 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	28 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)			3 V	900 mW	Surface Mount			Logic Level Gate	30 V	6 A	10 nC
ON Semiconductor FDS6961A_F011	220 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	90 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	4 nC		3 V	900 mW	Surface Mount			Logic Level Gate	30 V	3.5 A
ON Semiconductor FDS6982S	2040 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	28 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	5 V 12 nC		3 V	900 mW	Surface Mount			Logic Level Gate	30 V	6.3 A 8.6 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS6984AS Series

The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.

Documents

Technical documentation and resources