Discrete Semiconductor Products
R6004END3TL1
NRNDRohm Semiconductor
600V 4A TO-252 (DPAK), LOW-NOISE POWER MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
R6004END3TL1
NRNDRohm Semiconductor
600V 4A TO-252 (DPAK), LOW-NOISE POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6004END3TL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 59 W |
| Rds On (Max) @ Id, Vgs [Max] | 980 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 6868 | $ 1.57 | |
Description
General part information
R6004END3 Series
Power MOSFET R6004END3 is suitable for switching power supply.
Documents
Technical documentation and resources