Discrete Semiconductor Products

S8JLHE3-TP

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DIODE GEN PURP 600V 8A SMC

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 8A SMC

Technical Specifications

Parameters and characteristics for this part

Specification	S8JLHE3-TP

Capacitance @ Vr, F	150 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.05 V

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Mounting Type	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Grade	Qualification
Micro Commercial Components S8JL-TP	1.1 V	Standard Recovery >500ns	200 mA	Surface Mount	150 pF	5 µA	DO-214AB (SMC)	150 °C	-55 °C	600 V	Standard	DO-214AB SMC	8 A
Micro Commercial Components S8JLHE3-TP			200 mA 500 ns	Surface Mount	150 pF	5 µA	DO-214AB (SMC)	150 °C	-55 °C	600 V	Standard	DO-214AB SMC	8 A	1.05 V	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Surface Mount DO-214AB (SMC)

Technical documentation and resources