Discrete Semiconductor Products

SI4618DY-T1-GE3

Obsolete

MOSFET 2N-CH 30V 8A/15.2A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 8A/15.2A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4618DY-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C [Max]	15.2 A
Current - Continuous Drain (Id) @ 25°C [Min]	8 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	44 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1535 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	1.98 W, 4.16 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power - Max	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Configuration	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Vgs(th) (Max) @ Id [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI4618DY-T1-GE3	Surface Mount	-55 °C	150 °C	1535 pF	8-SOIC	17 mOhm	1.98 W 4.16 W	8-SOIC	3.9 mm	0.154 in	30 V	2 N-Channel (Half Bridge)	8 A	15.2 A	2.5 V	MOSFET (Metal Oxide)	44 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 8A, 15.2A 1.98W, 4.16W Surface Mount 8-SOIC

Technical documentation and resources