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Discrete Semiconductor Products
G3SBA20-M3/51
ActiveVishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 2.3A GBU
Discrete Semiconductor Products
G3SBA20-M3/51
ActiveVishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 2.3A GBU
Technical Specifications
Parameters and characteristics for this part
| Specification | G3SBA20-M3/51 |
|---|---|
| Current - Average Rectified (Io) | 2.3 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-SIP, GBU |
| Supplier Device Package | GBU |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
| Voltage - Peak Reverse (Max) [Max] | 200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 2000 | $ 0.69 | |
Description
General part information
G3SBA20 Series
Bridge Rectifier Single Phase Standard 200 V Through Hole GBU
Documents
Technical documentation and resources