Discrete Semiconductor Products

6A04-G

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DIODE GEN PURP 400V 6A P600

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 6A P600

Technical Specifications

Parameters and characteristics for this part

Specification	6A04-G

Capacitance	100 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Axial, P600
Package Name	P600
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	400 V
Voltage - Forward (Vf) (Max)	1.1 V

Part	Technology	Capacitance	Package Name	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Mounting Type	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - Forward (Vf) (Max)
Comchip Technology 6A04-G	Standard	100 pF	P600	6 A	Axial P600	5 µA	400 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	Through Hole	125 °C	-55 °C	1.1 V
Comchip Technology 6A04B-G	Standard	100 pF	R-6	6 A	Axial R-6	10 µA	400 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	Through Hole	125 °C	-55 °C	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode 400 V 6A Through Hole P600

Technical documentation and resources