Discrete Semiconductor Products

PSMN017-30EL,127

Obsolete

MOSFET N-CH 30V 32A I2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 32A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN017-30EL,127

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.7 nC
Input Capacitance (Ciss) (Max) @ Vds	552 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	47 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PSMN017-30EL,127	I2PAK	32 A	4.5 V 10 V	I2PAK TO-262-3 Long Leads TO-262AA	2.15 V	10.7 nC	Through Hole	MOSFET (Metal Oxide)	-55 °C	175 ░C	552 pF	20 V	47 W	17 mOhm	N-Channel	30 V
Freescale Semiconductor - NXP PSMN017-30BL,118	D2PAK	32 A	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.15 V	10.7 nC	Surface Mount	MOSFET (Metal Oxide)	-55 °C	175 ░C	552 pF	20 V	47 W	17 mOhm	N-Channel	30 V
Freescale Semiconductor - NXP PSMN017-60YS,115	LFPAK56 Power-SO8	44 A	10 V	SC-100 SOT-669			Surface Mount	MOSFET (Metal Oxide)	-55 °C	175 ░C	1172 pF	20 V		15.7 mOhm	N-Channel	60 V	20 nC	74 W
Freescale Semiconductor - NXP PSMN017-80PS,127	TO-220AB	50 A	10 V	TO-220-3			Through Hole	MOSFET (Metal Oxide)	-55 °C	175 ░C	1573 pF	20 V	103 W	17 mOhm	N-Channel	80 V			26 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 32A (Tc) 47W (Tc) Through Hole I2PAK

Technical documentation and resources