Specification	MPSA29

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10000
Frequency - Transition	125 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MPSA29(LEGACY%20FAIRCHILD) Series

NPN Bipolar Junction Darlington Transistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MPSA29_D27Z	-55 °C	150 °C	10000	TO-92-3	125 MHz	625 mW	1.5 V	100 V	TO-226-3 TO-92-3	500 nA	Through Hole	800 mA
ON Semiconductor MPSA29	-55 °C	150 °C	10000	TO-92-3	125 MHz	625 mW	1.5 V	100 V	TO-226-3 TO-92-3	500 nA	Through Hole	800 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This device is designed for applications requiring extremely high current gain at collector currents to 500 mA.

Technical documentation and resources