Discrete Semiconductor Products

BUK7Y43-60EX

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MOSFET N-CH 60V 22A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 22A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y43-60EX

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	617 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	45 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Mounting Type	Vgs (Max)	FET Type	Grade	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Qualification	Package / Case
Freescale Semiconductor - NXP BUK7Y43-60EX	MOSFET (Metal Oxide)	Surface Mount	20 V	N-Channel	Automotive	45 W	43 mOhm	60 V	10 V	-55 °C	175 ░C	10.4 nC	LFPAK56 Power-SO8	617 pF	22 A	AEC-Q101	SC-100 SOT-669

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 22A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources