Discrete Semiconductor Products

SH8M13GZETB

NRND

MOSFET N/P-CH 30V 6A/7A 8SOP

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Discrete Semiconductor Products

NRND

MOSFET N/P-CH 30V 6A/7A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8M13GZETB

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A, 7 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	8-SOP
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Operating Temperature	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case	Package / Case
Rohm Semiconductor SH8M13GZETB	1200 pF	N and P-Channel	150 °C	Surface Mount	8-SOP	2.5 V	2 W	30 V	6 A 7 A	18 nC	29 mOhm	0.154 in	8-SOIC	3.9 mm

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General part information

Mosfet Array 30V 6A, 7A 2W Surface Mount 8-SOP

Technical documentation and resources