Specification	BC556ABU

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max)	65 V

BC556A(LEGACY%20FAIRCHILD) Series

PNP Epitaxial Silicon Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Transistor Type	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Power - Max [Max]
ON Semiconductor BC556ABU	650 mV	100 mA	65 V	Through Hole	PNP	TO-226-3 TO-92-3	150 MHz	15 nA	150 °C	110	TO-92-3	500 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	8435	$ 0.04

Description

General part information

BC556A(LEGACY%20FAIRCHILD) Series

The PNP Epitaxial Silicon Transistor is designed for use in amplifier and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-135AN-TO-92 3 4.82x4.76

Package Drawing