Discrete Semiconductor Products

IXGK100N170

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TRANSISTOR: IGBT; NPT; 1.7KV; 100A; 830W; TO264

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Discrete Semiconductor Products

Active

TRANSISTOR: IGBT; NPT; 1.7KV; 100A; 830W; TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXGK100N170

Current - Collector Pulsed (Icm)	600 A
Gate Charge	425 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	830 W
Supplier Device Package	PLUS264™
Test Condition	15 V, 850 V, 100 A, 1 Ohm
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Test Condition	Supplier Device Package	Power - Max [Max]	Mounting Type	Current - Collector Pulsed (Icm)	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic
IXYS IXGK100N170	1 Ohm 15 V 100 A 850 V	PLUS264™	830 W	Through Hole	600 A	425 nC	1700 V	TO-264-3 TO-264AA	-55 °C	150 °C	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 1700 V 170 A 830 W Through Hole PLUS264™

Technical documentation and resources

No documents available