Specification	KSA614YTU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	25 W
Supplier Device Package	TO-220-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	55 V

KSA614 Series

PNP Epitaxial Silicon Transistor

Part	Power - Max [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]
ON Semiconductor KSA614YTU	25 W	Through Hole	120	TO-220-3	PNP	55 V	500 mV	TO-220-3	150 °C	3 A	50 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources