Discrete Semiconductor Products

P300B-E3/54

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DIODE GEN PURP 100V 3A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	P300B-E3/54

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division P300K-E3/54	Standard	1.2 V	DO-201AD Axial	2 µs	Through Hole	DO-201AD	5 µA	Standard Recovery >500ns	200 mA	-50 °C	150 °C	800 V	3 A
Vishay General Semiconductor - Diodes Division P300B-E3/54	Standard	1.2 V	DO-201AD Axial	2 µs	Through Hole	DO-201AD	5 µA	Standard Recovery >500ns	200 mA	-50 °C	150 °C	100 V	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 3A Through Hole DO-201AD

Technical documentation and resources