Discrete Semiconductor Products

VS-E4TU2006TFP-N3

Obsolete

DIODE GP 600V 20A TO220-2FP

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Discrete Semiconductor Products

Obsolete

DIODE GP 600V 20A TO220-2FP

Technical Specifications

Parameters and characteristics for this part

Specification	VS-E4TU2006TFP-N3

Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	61 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2 Full Pack
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.63 V

Part	Technology	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-E4TU2006TFP-N3	Standard	TO-220-2 Full Pack	15 µA	600 V	61 ns	TO-220-2 Full Pack	Through Hole	200 mA 500 ns	1.63 V	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 20A Through Hole TO-220-2 Full Pack

Technical documentation and resources