Integrated Circuits (ICs)
GD5F4GQ6UEY2GY
ActiveGigaDevice Semiconductor (HK) Limited
IC FLASH 4GBIT SPI/QUAD 8WSON
Deep-Dive with AI
Search across all available documentation for this part.
Integrated Circuits (ICs)
GD5F4GQ6UEY2GY
ActiveGigaDevice Semiconductor (HK) Limited
IC FLASH 4GBIT SPI/QUAD 8WSON
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GD5F4GQ6UEY2GY |
|---|---|
| Access Time | 9 ns |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Memory Interface | SPI, DTR, Quad I/O |
| Memory Organization | 1 G |
| Memory Size | 512 kB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 105 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (6x8) |
| Technology | FLASH - NAND (SLC) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page | 600 µs |
| Part | Memory Organization | Memory Size | Write Cycle Time - Word, Page | Supplier Device Package | Clock Frequency | Package / Case | Voltage - Supply [Max] | Voltage - Supply [Min] | Access Time | Memory Interface | Memory Type | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Memory Format |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 512 M | 512 kB | 600 µs | 8-WSON (6x8) | 104 MHz | 8-WDFN Exposed Pad | 3.6 V | 2.7 V | 9 ns | SPI - Quad I/O | Non-Volatile | Surface Mount | 85 C | -40 ¯C | FLASH - NAND (SLC) | FLASH |
GigaDevice Semiconductor (HK) Limited | 512 M | 512 kB | 600 µs | 8-WSON (6x8) | 104 MHz | 8-WDFN Exposed Pad | 3.6 V | 2.7 V | 9 ns | SPI - Quad I/O | Non-Volatile | Surface Mount | 85 C | -40 ¯C | FLASH - NAND (SLC) | FLASH |
GigaDevice Semiconductor (HK) Limited | 512 M | 512 kB | 600 µs | 8-WSON (6x8) | 80 MHz | 8-WDFN Exposed Pad | 2 V | 1.7 V | 11 ns | SPI - Quad I/O | Non-Volatile | Surface Mount | 85 C | -40 ¯C | FLASH - NAND (SLC) | FLASH |
GigaDevice Semiconductor (HK) Limited | 1 G | 512 kB | 600 µs | 8-WSON (6x8) | 80 MHz | 8-WDFN Exposed Pad | 2 V | 1.7 V | 11 ns | DTR Quad I/O SPI | Non-Volatile | Surface Mount | 105 °C | -40 °C | FLASH - NAND (SLC) | FLASH |
GigaDevice Semiconductor (HK) Limited | 512 M | 512 kB | 600 µs | 8-WSON (6x8) | 104 MHz | 8-WDFN Exposed Pad | 3.6 V | 2.7 V | 9 ns | SPI - Quad I/O | Non-Volatile | Surface Mount | 105 °C | -40 °C | FLASH - NAND (SLC) | FLASH |
GigaDevice Semiconductor (HK) Limited | 1 G | 512 kB | 600 µs | 8-WSON (6x8) | 104 MHz | 8-WDFN Exposed Pad | 3.6 V | 2.7 V | 9 ns | DTR Quad I/O SPI | Non-Volatile | Surface Mount | 105 °C | -40 °C | FLASH - NAND (SLC) | FLASH |
GigaDevice Semiconductor (HK) Limited | 512 M | 512 kB | 600 µs | 8-WSON (6x8) | 80 MHz | 8-WDFN Exposed Pad | 2 V | 1.7 V | 11 ns | SPI - Quad I/O | Non-Volatile | Surface Mount | 85 C | -40 ¯C | FLASH - NAND (SLC) | FLASH |
GigaDevice Semiconductor (HK) Limited | 512 M | 512 kB | 600 µs | 8-WSON (6x8) | 80 MHz | 8-WDFN Exposed Pad | 2 V | 1.7 V | 11 ns | SPI - Quad I/O | Non-Volatile | Surface Mount | 105 °C | -40 °C | FLASH - NAND (SLC) | FLASH |
 GigaDevice Semiconductor (HK) Limited | 512 M | 512 kB | 8-LGA (6x8) | 80 MHz | 8-WLGA Exposed Pad | 2 V | 1.7 V | SPI - Quad I/O | Non-Volatile | Surface Mount | 85 C | -40 ¯C | FLASH - NAND | FLASH |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 9.86 | |
| Tray | 4800 | $ 9.86 | ||
Description
General part information
GD5F4GQ6 Series
FLASH - NAND (SLC) Memory IC 4Gbit SPI - Quad I/O, DTR 104 MHz 9 ns 8-WSON (6x8)
Documents
Technical documentation and resources
No documents available