FQP34N20
ObsoletePOWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 200 V, 31 A, 75 MΩ, TO-220
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FQP34N20
ObsoletePOWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 200 V, 31 A, 75 MΩ, TO-220
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FQP34N20 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 78 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 180 W |
| Rds On (Max) @ Id, Vgs | 75 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FQP34N20 Series
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Documents
Technical documentation and resources