TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

MPSA92

Obsolete

ON Semiconductor

PNP BIPOLAR SMALL SIGNAL TRANSISTOR

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Search across all available documentation for this part.

DocumentsDatasheet MMBTA92, PZTA92

Discrete Semiconductor Products

MPSA92

Obsolete

ON Semiconductor

PNP BIPOLAR SMALL SIGNAL TRANSISTOR

Deep-Dive with AI

DocumentsDatasheet MMBTA92, PZTA92

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA92

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	250 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

MPSA92 Series

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Supplier Device Package	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MPSA92RLRP	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	Formed Leads TO-226-3 TO-92-3 Long Body	500 mV	TO-92	TO-226	500 mA
ON Semiconductor MPSA92RL1	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	Formed Leads TO-226-3 TO-92-3 Long Body	500 mV	TO-92	TO-226	500 mA
ON Semiconductor MPSA92_D27Z	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	TO-226-3 TO-92-3	500 mV	TO-92-3		500 mA
ON Semiconductor MPSA92RA	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	TO-226-3 TO-92-3	500 mV	TO-92-3		500 mA
ON Semiconductor MPSA92RLRMG	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	Formed Leads TO-226-3 TO-92-3 Long Body	500 mV	TO-92	TO-226	500 mA
ON Semiconductor MPSA92RL1G	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	Formed Leads TO-226-3 TO-92-3 Long Body	500 mV	TO-92	TO-226	500 mA
ON Semiconductor MPSA92	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	TO-226-3 TO-92-3 Long Body	500 mV	TO-92	TO-226	500 mA
ON Semiconductor MPSA92_D26Z	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	TO-226-3 TO-92-3	500 mV	TO-92-3		500 mA
ON Semiconductor MPSA92_J22Z	250 nA	50 MHz	300 V	Through Hole	625 mW	-55 °C	150 °C	PNP	25	TO-226-3 TO-92-3	500 mV	TO-92-3		500 mA
ON Semiconductor MPSA92RLRA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MPSA92 Series

This High Voltage PNP Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the TO-92 package.