Discrete Semiconductor Products

FDPF7N50F

Obsolete

ON Semiconductor

MOSFET N-CH 500V 6A TO220F

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Discrete Semiconductor Products

FDPF7N50F

Obsolete

ON Semiconductor

MOSFET N-CH 500V 6A TO220F

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDPF7N50F

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	960 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	38.5 W
Rds On (Max) @ Id, Vgs	1.15 Ohm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDPF7N50U Series

Power MOSFET, N-Channel, UniFET<sup>TM</sup>, Ultra FRFET<sup>TM</sup>, 500V, 5A, 1.5Ω, TO-220F

Part	Gate Charge (Qg) (Max) @ Vgs [x]	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
ON Semiconductor FDPF7N50F	20 nC	TO-220F-3	Through Hole	-55 °C	150 °C	960 pF	MOSFET (Metal Oxide)	30 V	38.5 W	500 V	1.15 Ohm	10 V	N-Channel	5 V	6 A	TO-220-3 Full Pack
ON Semiconductor FDPF7N50		TO-220F-3	Through Hole	-55 °C	150 °C	940 pF	MOSFET (Metal Oxide)	30 V		500 V	900 mOhm	10 V	N-Channel	5 V	7 A	TO-220-3 Full Pack	16.6 nC	39 W
ON Semiconductor FDPF7N50F	20 nC	TO-220F-3	Through Hole	-55 °C	150 °C	960 pF	MOSFET (Metal Oxide)	30 V	38.5 W	500 V	1.15 Ohm	10 V	N-Channel	5 V	6 A	TO-220-3 Full Pack
ON Semiconductor FDPF7N50U-G		TO-220F-3	Through Hole	-55 °C	150 °C	940 pF	MOSFET (Metal Oxide)	30 V	31.3 W	500 V	1.5 Ohm	10 V	N-Channel	5 V	5 A	TO-220-3 Full Pack	16.6 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	392	$ 0.77
		392	$ 0.77

Description

General part information

FDPF7N50U Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTMMOSFET has much superior body diode reverse recovery performance. Its trris less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources