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SC 59
Discrete Semiconductor Products

MUN2234T1G

Obsolete
ON Semiconductor

NPN BIPOLAR DIGITAL TRANSISTOR (BRT)

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SC 59
Discrete Semiconductor Products

MUN2234T1G

Obsolete
ON Semiconductor

NPN BIPOLAR DIGITAL TRANSISTOR (BRT)

Technical Specifications

Parameters and characteristics for this part

SpecificationMUN2234T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]338 mW
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Supplier Device PackageSC-59
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MUN2234 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.