Discrete Semiconductor Products

XP234N08013R-G

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MOSFET, N-CH, 0.8A, 30V, SOT-323-3A ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 0.8A, 30V, SOT-323-3A ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	XP234N08013R-G

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.32 nC
Input Capacitance (Ciss) (Max) @ Vds	64 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max)	350 mW
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	SOT-323-3A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id
Torex Semiconductor Ltd XP234N08013R-G	350 mW	SOT-323-3A	800 mA	30 V	20 V	290 mOhm	Surface Mount	64 pF	N-Channel	MOSFET (Metal Oxide)	1.32 nC	150 °C	4.5 V 10 V	SC-70 SOT-323	2.6 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 800mA (Ta) 350mW (Ta) Surface Mount SOT-323-3A

Technical documentation and resources