Specification	FQD13N06TM

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	28 W, 2.5 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQD13N06L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQD13N06LTM	2.5 W 28 W	11 A	10 V	5 V	20 V	-55 °C	150 °C	60 V	N-Channel	Surface Mount	115 mOhm	350 pF	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	6.4 nC	2.5 V
ON Semiconductor FQD13N06TM	2.5 W 28 W	10 A			25 V	-55 °C	150 °C	60 V	N-Channel	Surface Mount	140 mOhm		MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	7.5 nC	4 V	310 pF	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQD13N06L Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.