Discrete Semiconductor Products

PBSS5612PA,115

Obsolete

TRANS PNP 12V 6A 3HUSON

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Discrete Semiconductor Products

Obsolete

TRANS PNP 12V 6A 3HUSON

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5612PA,115

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	190
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-PowerUDFN
Power - Max [Max]	2.1 W
Supplier Device Package	3-HUSON
Supplier Device Package [x]	2
Supplier Device Package [y]	2
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

Part	Transistor Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type	Package / Case	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]
Nexperia USA Inc. PBSS5612PA,115	PNP	150 °C	12 V	60 MHz	300 mV	190	100 nA	2.1 W	Surface Mount	3-PowerUDFN	3-HUSON	2	2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 12 V 6 A 60MHz 2.1 W Surface Mount 3-HUSON (2x2)

Technical documentation and resources