Specification	NVH050N65S3F

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	123 nC
Input Capacitance (Ciss) (Max) @ Vds	5404 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	403 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

NVH050N65S3F Series

N-Channel, SUPERFET III MOSFET, FRFET 650V, 50 mΩ, 58A

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
ON Semiconductor NVH050N65S3F	58 A	5 V	TO-247-3	403 W	MOSFET (Metal Oxide)	123 nC	N-Channel	5404 pF	Through Hole	-55 °C	150 °C	TO-247-3	50 mOhm	650 V	10 V	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.87
		30	$ 8.80
		120	$ 8.28
		510	$ 7.50
		1020	$ 6.88
Newark	Each	250	$ 7.18
		500	$ 6.97
ON Semiconductor	N/A	1	$ 5.89

Description

General part information

NVH050N65S3F Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability