Discrete Semiconductor Products

2SD2707T2LV

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BIPOLAR TRANSISTORS - BJT NPN 50V 0.15A

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 50V 0.15A

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2707T2LV

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	300 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	820
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power - Max [Max]	150 mW
Supplier Device Package	VMT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	0.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
Rohm Semiconductor 2SD2707T2LV	VMT3	SOT-723	Surface Mount	150 mA	150 mW	150 °C	50 V	300 nA	0.3 V	NPN	820	250 MHz

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General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 250MHz 150 mW Surface Mount VMT3

Technical documentation and resources