Discrete Semiconductor Products

PMBF170,215

NRND

MOSFET N-CH 60V 300MA TO236AB

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Discrete Semiconductor Products

NRND

MOSFET N-CH 60V 300MA TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMBF170,215

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	40 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	830 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PMBF170,235	40 pF	150 °C	-65 °C	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	TO-236AB	5 Ohm	60 V	Surface Mount	4.5 V 10 V	830 mW	20 V	N-Channel	300 mA	2 V
Freescale Semiconductor - NXP PMBF170,215	40 pF	150 °C	-65 °C	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	TO-236AB	5 Ohm	60 V	Surface Mount	4.5 V 10 V	830 mW	20 V	N-Channel	300 mA	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB

Technical documentation and resources