Discrete Semiconductor Products

NTP85N03

Obsolete

MOSFET N-CH 28V 85A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 28V 85A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	NTP85N03

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	28 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	2150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	6.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTP85N03	4.5 V 10 V	85 A	Through Hole	29 nC	28 V	80 W	N-Channel	MOSFET (Metal Oxide)	2150 pF	3 V	6.8 mOhm	TO-220	20 V	TO-220-3	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 28 V 85A (Tc) 80W (Tc) Through Hole TO-220

Technical documentation and resources