Discrete Semiconductor Products

PCDP20120G1_T0_00001

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TO-220AC, SIC

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Discrete Semiconductor Products

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TO-220AC, SIC

Technical Specifications

Parameters and characteristics for this part

Specification	PCDP20120G1_T0_00001

Capacitance @ Vr, F	1040 pF
Current - Reverse Leakage @ Vr	180 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	20 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Technology	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr
Panjit International Inc. PCDP20120G1_T0_00001	SiC (Silicon Carbide) Schottky	500 mA	175 ░C	-55 °C	1040 pF	Through Hole	1.2 kV	TO-220-2	0 ns	TO-220AC	20 A	1.7 V	180 µA

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General part information

Diode 1200 V 20A Through Hole TO-220AC

Technical documentation and resources

No documents available