Discrete Semiconductor Products

RJK1028DNS-00#J5

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NCH POWER MOSFET 100V 4A 165MOHM POWER SON-8 3.3X3.3

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Discrete Semiconductor Products

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NCH POWER MOSFET 100V 4A 165MOHM POWER SON-8 3.3X3.3

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1028DNS-00#J5

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.7 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Rds On (Max) @ Id, Vgs [Max]	165 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-5 V, 12 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Nch Power MOSFET 100V 4A 165mohm Power SON-8 3.3x3.3

Part	Supplier Device Package	Mounting Type	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
Renesas Electronics Corporation RJK1028DNS-00#J5	8-HWSON (3.3x3.3)	Surface Mount	-5 V 12 V	165 mOhm	8-PowerWDFN	4.5 V 10 V	2.5 V	450 pF	4 A	N-Channel	100 V	MOSFET (Metal Oxide)	3.7 nC	150 °C

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General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources