Discrete Semiconductor Products

SCS120KGC

Obsolete

DIODE SIL CARB 1.2KV 20A TO220AC

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 20A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SCS120KGC

Capacitance @ Vr, F	1300 pF
Current - Reverse Leakage @ Vr	400 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.75 V

Part	Operating Temperature - Junction [Max]	Speed	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Capacitance @ Vr, F	Technology	Mounting Type	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If
Rohm Semiconductor SCS120KGC	175 ░C	500 mA	TO-220-2	400 µA	1.2 kV	TO-220AC	1300 pF	SiC (Silicon Carbide) Schottky	Through Hole	0 ns	1.75 V
Rohm Semiconductor SCS120KE2C	175 ░C	500 mA	TO-247-3	200 µA	1.2 kV	TO-247		SiC (Silicon Carbide) Schottky	Through Hole	0 ns		1 Pair Common Cathode	10 A	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 45.00

General part information

Diode 1200 V 20A Through Hole TO-220AC

Technical documentation and resources