Discrete Semiconductor Products

JANTX2N3019/TR

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TRANS NPN 80V 1A TO5

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Discrete Semiconductor Products

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TRANS NPN 80V 1A TO5

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX2N3019/TR

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-205AA, TO-5-3 Metal Can
Power - Max [Max]	800 mW
Qualification	MIL-PRF-19500/391
Supplier Device Package	TO-5
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Qualification	Current - Collector Cutoff (Max) [Max]	Grade	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Microsemi Corporation JANTX2N3019/TR	80 V	TO-205AA TO-5-3 Metal Can	TO-5	1 A	50	NPN	MIL-PRF-19500/391	10 µA	Military	500 mV	Through Hole	800 mW	200 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-5

Technical documentation and resources