Discrete Semiconductor Products

2SK3747

Obsolete

MOSFET N-CH 1500V 2A TO3PML

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 1500V 2A TO3PML

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3747

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37.5 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	50 W, 3 W
Rds On (Max) @ Id, Vgs	13 Ohm
Supplier Device Package	TO-3PML
Technology	MOSFET (Metal Oxide)
Vgs (Max)	35 V

Part	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor 2SK3747	N-Channel	3 W 50 W	2 A	TO-3P-3 Full Pack	13 Ohm	150 °C	1500 V	TO-3PML	Through Hole	380 pF	MOSFET (Metal Oxide)	35 V	37.5 nC	10 V
ON Semiconductor 2SK3747-MG8	N-Channel		2 A	TO-3P-3 Full Pack	13 Ohm	150 °C	1500 V	TO-3PML	Through Hole	380 pF	MOSFET (Metal Oxide)	35 V	37.5 nC	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1500 V 2A (Ta) 3W (Ta), 50W (Tc) Through Hole TO-3PML

Technical documentation and resources