Discrete Semiconductor Products

EPC7014UBC

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GAN FET HEMT 60V 1A COTS 4UB

Discrete Semiconductor Products

Active

GAN FET HEMT 60V 1A COTS 4UB

Technical Specifications

Parameters and characteristics for this part

Specification	EPC7014UBC

Current - Continuous Drain (Id) (Tc)	1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	22 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-SMD, No Lead
Package Name	4-SMD
Rds On (Max)	580 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	7 V
Vgs(th) (Max)	2.5 V

Part	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Mounting Type	Package Name	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)
EPC Space, LLC EPC7014UBC	N-Channel	-55 °C	150 °C	1 A	GaNFET (Gallium Nitride)	Surface Mount	4-SMD	4-SMD No Lead	60 V	5 V	580 mOhm	-4 V	7 V	2.5 V	22 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 60 V 1A (Tc) Surface Mount 4-SMD

Technical documentation and resources