Discrete Semiconductor Products

IXFB82N60Q3

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHHIPERFET-Q3 CLASS TO-264(3)/ TUBE

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Discrete Semiconductor Products

IXFB82N60Q3

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHHIPERFET-Q3 CLASS TO-264(3)/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB82N60Q3

Current - Continuous Drain (Id) @ 25°C	82 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	275 nC
Input Capacitance (Ciss) (Max) @ Vds	13500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	1560 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

IXFB82N60Q3 Series

DiscMSFT NChHiPerFET-Q3 Class TO-264(3)

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	FET Type	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Littelfuse/Commercial Vehicle Products IXFB82N60Q3	82 A	-55 °C	150 °C	13500 pF	6.5 V	1560 W	N-Channel	30 V	Through Hole	75 mOhm	275 nC	MOSFET (Metal Oxide)	PLUS264™	TO-264-3 TO-264AA	10 V	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 29.39
		25	$ 28.91
Newark	Each	250	$ 30.30

Description

General part information

IXFB82N60Q3 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Documents

Technical documentation and resources