Discrete Semiconductor Products

DB105G

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BRIDGE RECTIFIERS SI BRIDGE RECT DB-PK 50-1000V 1A600P/420

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Discrete Semiconductor Products

Active

BRIDGE RECTIFIERS SI BRIDGE RECT DB-PK 50-1000V 1A600P/420

Technical Specifications

Parameters and characteristics for this part

Specification	DB105G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.321 in
Package / Case	4-EDIP
Package / Case	8.15 mm
Supplier Device Package	DB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Diode Type	Package / Case	Package / Case	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - Peak Reverse (Max) [Max]	Mounting Type	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor DB105G	Single Phase	0.321 in	4-EDIP	8.15 mm	DB	150 °C	-55 °C	1.1 V	600 V	Through Hole	Standard	1 A	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole DB

Technical documentation and resources