Specification	FJE3303H1TU

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	20 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

FJE3303 Series

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Transistor Type	Frequency - Transition	Operating Temperature	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FJE3303H2	TO-126-3	400 V	1.5 A	NPN	4 MHz	150 °C	Through Hole	10 µA	3 V	20 W	TO-126-3 TO-225AA	14
ON Semiconductor FJE3303H2TU	TO-126-3	400 V	1.5 A	NPN	4 MHz	150 °C	Through Hole	10 µA	3 V	20 W	TO-126-3 TO-225AA	14
ON Semiconductor FJE3303H2TU	TO-126-3	400 V	1.5 A	NPN	4 MHz	150 °C	Through Hole	10 µA	3 V	20 W	TO-126-3 TO-225AA	14
ON Semiconductor FJE3303H1TU	TO-126-3	400 V	1.5 A	NPN	4 MHz	150 °C	Through Hole	10 µA	3 V	20 W	TO-126-3 TO-225AA	8

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 1.5 A 4MHz 20 W Through Hole TO-126-3

Technical documentation and resources